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Effect of rare earth on ZnO-based memristors

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dc.contributor Hernández Márquez, Sergi
dc.contributor Blázquez, O. (Oriol)
dc.creator Bonet Isidro, Ferran
dc.date 2018-11-19T11:04:16Z
dc.date 2018-11-19T11:04:16Z
dc.date 2018-07
dc.date.accessioned 2024-12-16T10:27:04Z
dc.date.available 2024-12-16T10:27:04Z
dc.identifier http://hdl.handle.net/2445/126208
dc.identifier.uri http://fima-docencia.ub.edu:8080/xmlui/handle/123456789/21836
dc.description Màster en Nanociència i Nanotecnologia, Facultat de Física, Universitat de Barcelona, Curs: 2017-2018. Tutors: Sergi Hernández , Oriol Blázquez
dc.description Memristors are electronic devices that present resistive switching. Their main application is the fabrication of digital memories. In this work Tb doped-ZnO based memristors are characterized and their properties are compared to the ones of undoped ZnO devices. The study shows that it is possible to obtain switching in doped ZnO-based devices at lower currents. Devices doped with rare earth ions also exhibit light emission, while preserving their resistive switching properties. This was not observed in the undoped devices and is an important advantage for developing optically read digital memories. Finally, the electrical conduction mechanisms present in the memristors are also analyzed
dc.format 10 p.
dc.format application/pdf
dc.language eng
dc.rights cc-by-nc-nd (c) Bonet, 2018
dc.rights http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.rights info:eu-repo/semantics/openAccess
dc.source Màster Oficial - Nanociència i Nanotecnologia
dc.subject Nanoelectrònica
dc.subject Circuits electrònics
dc.subject Teoria de la commutació
dc.subject Treballs de fi de màster
dc.subject Nanoelectronics
dc.subject Electronic circuits
dc.subject Switching theory
dc.subject Master's theses
dc.title Effect of rare earth on ZnO-based memristors
dc.type info:eu-repo/semantics/masterThesis


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