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Characterisation of a Silicon Photomultiplier of 64 channels

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dc.contributor Graciani Díaz, Ricardo
dc.creator Ventura Barroso, Ana
dc.date 2018-09-14T15:42:56Z
dc.date 2018-09-14T15:42:56Z
dc.date 2018-01
dc.date.accessioned 2024-12-16T10:26:40Z
dc.date.available 2024-12-16T10:26:40Z
dc.identifier http://hdl.handle.net/2445/124593
dc.identifier.uri http://fima-docencia.ub.edu:8080/xmlui/handle/123456789/21417
dc.description Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2018, Tutor: Ricardo Graciani Diaz
dc.description This work presents the study of a 64 channel silicon photomultiplier (3.2 x 3.2 mm2 each channel) built by Hammamatsu. From the experimental data, the values of the gain at four different voltages (68V, 68.5V, 69V, 69.5V) are measured for each channel and, the breakdown voltage and the gain per voltage, for each channel, have been determined. Also measurements at 70V have been preformed but rejected because of the amount of noise.
dc.format 5 p.
dc.format application/pdf
dc.language eng
dc.rights cc-by-nc-nd (c) Ventura, 2018
dc.rights http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.rights info:eu-repo/semantics/openAccess
dc.source Treballs Finals de Grau (TFG) - Física
dc.subject Detectors
dc.subject Silici
dc.subject Treballs de fi de grau
dc.subject Detectors
dc.subject Silicon
dc.subject Bachelor's theses
dc.title Characterisation of a Silicon Photomultiplier of 64 channels
dc.type info:eu-repo/semantics/bachelorThesis


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