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| dc.creator | Carreras, Josep | |
| dc.creator | Bonafos, Caroline | |
| dc.creator | Montserrat i Martí, Josep | |
| dc.creator | Domínguez, Carlos (Domínguez Horna) | |
| dc.creator | Albiol i Cobos, Jordi | |
| dc.creator | Garrido Fernández, Blas | |
| dc.date | 2011-04-12T08:15:27Z | |
| dc.date | 2011-04-12T08:15:27Z | |
| dc.date | 2008 | |
| dc.date.accessioned | 2024-12-16T10:26:29Z | |
| dc.date.available | 2024-12-16T10:26:29Z | |
| dc.identifier | 0957-4484 | |
| dc.identifier | http://hdl.handle.net/2445/17583 | |
| dc.identifier | 585158 | |
| dc.identifier.uri | http://fima-docencia.ub.edu:8080/xmlui/handle/123456789/21168 | |
| dc.description | We describe high-speed control of light from silicon nanocrystals under electrical excitation. The nanocrystals are fabricated by the ion implantation of Si+ in the 15?nm thick gate oxide of a field effect transistor at 6.5?keV. A characteristic read-peaked electroluminescence is obtained either by DC or AC gate excitation. However, AC gate excitation is found to have a frequency response that is limited by the radiative lifetimes of silicon nanocrystals, which makes impossible the direct modulation of light beyond 100?kb?s?1 rates. As a solution, we demonstrate that combined DC gate excitation along with an AC channel hot electron injection of electrons into the nanocrystals may be used to obtain a 100% deep modulation at rates of 200?Mb?s?1 and low modulating voltages. This approach may find applications in biological sensing integrated into CMOS, single-photon emitters or direct encoding of information into light from Si-nc doped with erbium systems, which exhibit net optical gain. In this respect, the main advantage compared to conventional electro-optical modulators based on plasma dispersion effects is the low power consumption (104 times smaller) and thus the inherent large scale of integration. A detailed electrical characterization is also given. An Si/SiO2 barrier change from ?b = 3.2 to 4.2?eV is found while the injection mechanism is changed from Fowler?Nordheim to channel hot electron, which is a clear signature of nanocrystal charging and subsequent electroluminescence quenching. | |
| dc.format | 17 p. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | IOP Publishing Ltd. | |
| dc.relation | Versió postprint del document publicat a http://dx.doi.org/10.1088/0957-4484/19/20/205201 | |
| dc.relation | Nanotechnology, 2008, vol. 19, núm. 20, p. 205201-1-205201-9 | |
| dc.relation | http://dx.doi.org/10.1088/0957-4484/19/20/205201 | |
| dc.relation | info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS | |
| dc.rights | (c) IOP Publishing, 2009 | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | |
| dc.subject | Electrònica | |
| dc.subject | Matèria condensada | |
| dc.subject | Nanocristalls semiconductors | |
| dc.subject | Electronics | |
| dc.subject | Condensed matter | |
| dc.subject | Semiconductor nanocrystals | |
| dc.title | Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/acceptedVersion |
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