| dc.creator |
Carreras, Josep |
|
| dc.creator |
Bonafos, Caroline |
|
| dc.creator |
Montserrat i Martí, Josep |
|
| dc.creator |
Domínguez, Carlos (Domínguez Horna) |
|
| dc.creator |
Albiol i Cobos, Jordi |
|
| dc.creator |
Garrido Fernández, Blas |
|
| dc.date |
2011-04-12T08:15:27Z |
|
| dc.date |
2011-04-12T08:15:27Z |
|
| dc.date |
2008 |
|
| dc.date.accessioned |
2024-12-16T10:26:29Z |
|
| dc.date.available |
2024-12-16T10:26:29Z |
|
| dc.identifier |
0957-4484 |
|
| dc.identifier |
http://hdl.handle.net/2445/17583 |
|
| dc.identifier |
585158 |
|
| dc.identifier.uri |
http://fima-docencia.ub.edu:8080/xmlui/handle/123456789/21168 |
|
| dc.description |
We describe high-speed control of light from silicon nanocrystals under electrical excitation. The nanocrystals are fabricated by the ion implantation of Si+ in the 15?nm thick gate oxide of a field effect transistor at 6.5?keV. A characteristic read-peaked electroluminescence is obtained either by DC or AC gate excitation. However, AC gate excitation is found to have a frequency response that is limited by the radiative lifetimes of silicon nanocrystals, which makes impossible the direct modulation of light beyond 100?kb?s?1 rates. As a solution, we demonstrate that combined DC gate excitation along with an AC channel hot electron injection of electrons into the nanocrystals may be used to obtain a 100% deep modulation at rates of 200?Mb?s?1 and low modulating voltages. This approach may find applications in biological sensing integrated into CMOS, single-photon emitters or direct encoding of information into light from Si-nc doped with erbium systems, which exhibit net optical gain. In this respect, the main advantage compared to conventional electro-optical modulators based on plasma dispersion effects is the low power consumption (104 times smaller) and thus the inherent large scale of integration. A detailed electrical characterization is also given. An Si/SiO2 barrier change from ?b = 3.2 to 4.2?eV is found while the injection mechanism is changed from Fowler?Nordheim to channel hot electron, which is a clear signature of nanocrystal charging and subsequent electroluminescence quenching. |
|
| dc.format |
17 p. |
|
| dc.format |
application/pdf |
|
| dc.language |
eng |
|
| dc.publisher |
IOP Publishing Ltd. |
|
| dc.relation |
Versió postprint del document publicat a http://dx.doi.org/10.1088/0957-4484/19/20/205201 |
|
| dc.relation |
Nanotechnology, 2008, vol. 19, núm. 20, p. 205201-1-205201-9 |
|
| dc.relation |
http://dx.doi.org/10.1088/0957-4484/19/20/205201 |
|
| dc.relation |
info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS |
|
| dc.rights |
(c) IOP Publishing, 2009 |
|
| dc.rights |
info:eu-repo/semantics/openAccess |
|
| dc.source |
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
|
| dc.subject |
Electrònica |
|
| dc.subject |
Matèria condensada |
|
| dc.subject |
Nanocristalls semiconductors |
|
| dc.subject |
Electronics |
|
| dc.subject |
Condensed matter |
|
| dc.subject |
Semiconductor nanocrystals |
|
| dc.title |
Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals |
|
| dc.type |
info:eu-repo/semantics/article |
|
| dc.type |
info:eu-repo/semantics/acceptedVersion |
|