Mostra el registre parcial de l'element
| dc.creator | Pitanti, Alessandro | |
| dc.creator | Navarro Urrios, Daniel | |
| dc.creator | Prtljaga, Nikola | |
| dc.creator | Daldosso, Nicola | |
| dc.creator | Gourbilleau, Fabrice | |
| dc.creator | Rizk, Richard | |
| dc.creator | Garrido Fernández, Blas | |
| dc.creator | Pavesi, Lorenzo | |
| dc.date | 2011-01-25T12:51:43Z | |
| dc.date | 2011-01-25T12:51:43Z | |
| dc.date | 2010-09-13 | |
| dc.date | 2011-01-14T13:50:56Z | |
| dc.date.accessioned | 2024-12-16T10:25:52Z | |
| dc.date.available | 2024-12-16T10:25:52Z | |
| dc.identifier | 1089-7550 | |
| dc.identifier | http://hdl.handle.net/2445/15724 | |
| dc.identifier | 585169 | |
| dc.identifier.uri | http://fima-docencia.ub.edu:8080/xmlui/handle/123456789/20155 | |
| dc.description | We report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles (Si-np), both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast (< 200 ns) energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron"recycling" effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface. (C) 2010 American Institute of Physics. | |
| dc.format | 8 p. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | American Institute of Physics | |
| dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3476286 | |
| dc.relation | Journal of Applied Physics, 2010, vol. 108, núm. 5, p. 53518-1-53518-8 | |
| dc.relation | http://dx.doi.org/10.1063/1.3476286 | |
| dc.relation | info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS | |
| dc.relation | info:eu-repo/grantAgreement/EC/FP6/033574/EU//LANCER | |
| dc.rights | (c) American Institute of Physics, 2010 | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | |
| dc.subject | Semiconductors | |
| dc.subject | Nanopartícules | |
| dc.subject | Semiconductors | |
| dc.subject | Nanoparticles | |
| dc.title | Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/publishedVersion |
| Fitxers | Grandària | Format | Visualització |
|---|---|---|---|
|
No hi ha fitxers associats a aquest element. |
|||