| dc.creator |
Pitanti, Alessandro |
|
| dc.creator |
Navarro Urrios, Daniel |
|
| dc.creator |
Prtljaga, Nikola |
|
| dc.creator |
Daldosso, Nicola |
|
| dc.creator |
Gourbilleau, Fabrice |
|
| dc.creator |
Rizk, Richard |
|
| dc.creator |
Garrido Fernández, Blas |
|
| dc.creator |
Pavesi, Lorenzo |
|
| dc.date |
2011-01-25T12:51:43Z |
|
| dc.date |
2011-01-25T12:51:43Z |
|
| dc.date |
2010-09-13 |
|
| dc.date |
2011-01-14T13:50:56Z |
|
| dc.date.accessioned |
2024-12-16T10:25:52Z |
|
| dc.date.available |
2024-12-16T10:25:52Z |
|
| dc.identifier |
1089-7550 |
|
| dc.identifier |
http://hdl.handle.net/2445/15724 |
|
| dc.identifier |
585169 |
|
| dc.identifier.uri |
http://fima-docencia.ub.edu:8080/xmlui/handle/123456789/20155 |
|
| dc.description |
We report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles (Si-np), both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast (< 200 ns) energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron"recycling" effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface. (C) 2010 American Institute of Physics. |
|
| dc.format |
8 p. |
|
| dc.format |
application/pdf |
|
| dc.language |
eng |
|
| dc.publisher |
American Institute of Physics |
|
| dc.relation |
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3476286 |
|
| dc.relation |
Journal of Applied Physics, 2010, vol. 108, núm. 5, p. 53518-1-53518-8 |
|
| dc.relation |
http://dx.doi.org/10.1063/1.3476286 |
|
| dc.relation |
info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS |
|
| dc.relation |
info:eu-repo/grantAgreement/EC/FP6/033574/EU//LANCER |
|
| dc.rights |
(c) American Institute of Physics, 2010 |
|
| dc.rights |
info:eu-repo/semantics/openAccess |
|
| dc.source |
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
|
| dc.subject |
Semiconductors |
|
| dc.subject |
Nanopartícules |
|
| dc.subject |
Semiconductors |
|
| dc.subject |
Nanoparticles |
|
| dc.title |
Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples |
|
| dc.type |
info:eu-repo/semantics/article |
|
| dc.type |
info:eu-repo/semantics/publishedVersion |
|