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Ground- and excited-state properties of M-center oxygen vacancy aggregates in the bulk and the surface of MgO

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dc.creator Domínguez-Ariza, David
dc.creator Sousa Romero, Carmen
dc.creator Illas i Riera, Francesc
dc.creator Ricci, Davide
dc.creator Pacchioni, Gianfranco
dc.date 2010-01-22T12:01:11Z
dc.date 2010-01-22T12:01:11Z
dc.date 2003
dc.date.accessioned 2024-12-16T10:20:44Z
dc.date.available 2024-12-16T10:20:44Z
dc.identifier 0163-1829
dc.identifier http://hdl.handle.net/2445/10809
dc.identifier 510405
dc.identifier.uri http://fima-docencia.ub.edu:8080/xmlui/handle/123456789/11486
dc.description Aggregates of oxygen vacancies (F centers) represent a particular form of point defects in ionic crystals. In this study we have considered the combination of two oxygen vacancies, the M center, in the bulk and on the surface of MgO by means of cluster model calculations. Both neutral and charged forms of the defect M and M+ have been taken into account. The ground state of the M center is characterized by the presence of two doubly occupied impurity levels in the gap of the material; in M+ centers the highest level is singly occupied. For the ground-state properties we used a gradient corrected density functional theory approach. The dipole-allowed singlet-to-singlet and doublet-to-doublet electronic transitions have been determined by means of explicitly correlated multireference second-order perturbation theory calculations. These have been compared with optical transitions determined with the time-dependent density functional theory formalism. The results show that bulk M and M+ centers give rise to intense absorptions at about 4.4 and 4.0 eV, respectively. Another less intense transition at 1.3 eV has also been found for the M+ center. On the surface the transitions occur at 1.6 eV (M+) and 2 eV (M). The results are compared with recently reported electron energy loss spectroscopy spectra on MgO thin films.
dc.format 9 p.
dc.format application/pdf
dc.language eng
dc.publisher The American Physical Society
dc.relation Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.68.054101
dc.relation Physical Review B, 2003, vol. 68, núm. 5, p. 054101-1-054101-9
dc.relation http://dx.doi.org/10.1103/PhysRevB.68.054101
dc.rights (c) The American Physical Society, 2003
dc.rights info:eu-repo/semantics/openAccess
dc.source Articles publicats en revistes (Ciència dels Materials i Química Física)
dc.subject Defectes cristal·lins
dc.subject Química de superfícies
dc.subject Química computacional
dc.subject Teoria del funcional de densitat
dc.subject Crystals defects
dc.subject Surface chemistry
dc.subject Computational chemistry
dc.subject Density functional theory
dc.title Ground- and excited-state properties of M-center oxygen vacancy aggregates in the bulk and the surface of MgO
dc.type info:eu-repo/semantics/article
dc.type info:eu-repo/semantics/publishedVersion


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